| PART |
Description |
Maker |
| DGS20-018AS |
Gallium Arsenide Schottky Rectifier 23 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| CHV2710-QJ07 |
2.5 GHz InGaP HBT 5W Linear Power Amplifier 2.5千兆赫的InGaP HBT 5W线性功率放大器
|
Mimix Broadband, Inc.
|
| PB-CGB7009-SC-0000 PB-CGB7009-SP-0000 |
DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier 直流6.0千兆赫的InGaP HBT，MMIC的或包装，匹配增益模块放大器
|
Mimix Broadband, Inc.
|
| PB-CGB7014-SC-0000 PB-CGB7014-SP-0000 |
DC-8.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier 直流8.0千兆赫的InGaP HBT，MMIC的或包装，匹配增益模块放大器
|
Mimix Broadband, Inc.
|
| DSEP30-06A DGS19-025AS DGSK40-025A DGSK40-025AS DG |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
HiPerFRED Epitaxial Diode with soft recovery
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MGR2018CT_D ON1880 MGR2018CT |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| DGSK40-025CS DGS19-025CS |
31 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB PLASTIC PACKAGE-4
31 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA PLASTIC PACKAGE-4
|
IXYS, Corp.
|
| CHP2299 |
CHP2299 is an InGaP HBT amplifier module offering high performance for WCDMA wireless handsets.
WCDMA InGaP HBT Amplifier Module
|
Anadigics Inc
|
| HMC361 |
GaAs HBT MMIC DIVIDE-BY-2, DC - 11.0 GHz
From old datasheet system
Prescaler
600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs HBT MMIC DIVIDE-BY-2/ DC - 11.0 GHz
|
Hittite Microwave Corpo...
HITTITE[Hittite Microwave Corporation]
美国讯泰微波有限公司上海代表
|
| CGB240 |
2-Stage Bluetooth InGaP HBT Power Amplifier
2.4 to 2.5 GHz HBT Bluetooth Power Amplifier
|
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
|
| GN01010 |
Gallium Arsenide Devices
|
Panasonic
|
